Siltronic AG joins IMEC to study growth of GaN on 200mm silicon wafers
In addition to Siltronic, many other participants have joined this multinational research platform, such as integrated equipment vendors, foundries, silicon compounds and silicon substrate manufacturers. They will work with IMEC's ​​equipment and technical resources in Sophie, Belgium, which will ensure that all participants are integrated into the company's cooperation.
It is known that GaN has excellent electron mobility, high breakdown voltage and good thermal conductivity, and is suitable for use in optoelectronics and manufacturing of power semiconductor components such as wind turbines, solar power systems, electric vehicles and energy-saving kitchen appliances. However, in order to realize the growth of GaN/(Al)GaN epitaxial layers on large-sized silicon wafers, GaN technology needs to be further improved, and an inexpensive and efficient production method needs to be sought.
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