Sun Yat-sen University uses delta technology to improve the antistatic ability of nitride LED
[High-tech LED News] Recently, the State Key Laboratory of Optoelectronic Materials of Sun Yat-sen University used four-layer silicon delta-doped GaN as an n-type cladding layer to improve the antistatic ability of nitride LEDs. This improvement is due to the crystal quality of epitaxial GaN materials. Improvements and improvements in device current expansion.
The delta doping technique is achieved by selectively opening or closing trimethylgallium and silane while maintaining the same ammonia flow rate. With the delta doping technique, the ESD value of the LED device is increased from 1200 volts to more than 4000 volts, and the electrical power is also significantly increased. At 350 mA operating current, the output power is increased by 12.8%.
At the same time, the delta-doped layer effectively reduces the dislocation density in the GaN material, reducing the dislocation density from 7x107/cm2 to 3x106/cm2. The reduction of the dislocation density reduces the LED reverse leakage by an order of magnitude, in addition, by infrared microscopy. Tests on the thermal performance of LEDs have shown that delta-doped LEDs have a more uniform current spread, thus reducing the current density of the device and thus increasing the antistatic capability.
The delta doping technique is achieved by selectively opening or closing trimethylgallium and silane while maintaining the same ammonia flow rate. With the delta doping technique, the ESD value of the LED device is increased from 1200 volts to more than 4000 volts, and the electrical power is also significantly increased. At 350 mA operating current, the output power is increased by 12.8%.
At the same time, the delta-doped layer effectively reduces the dislocation density in the GaN material, reducing the dislocation density from 7x107/cm2 to 3x106/cm2. The reduction of the dislocation density reduces the LED reverse leakage by an order of magnitude, in addition, by infrared microscopy. Tests on the thermal performance of LEDs have shown that delta-doped LEDs have a more uniform current spread, thus reducing the current density of the device and thus increasing the antistatic capability.
HQQN wholesale all model li-polymer IPhone Battery from iphone 4 battery to IPhone X Battery. This battery is 1510 mAh pure cobalt li-po battery for iphone 5C, Quality and size same as original IPhone 5C Battery. the standby time is about 100 hour, 4 G Internet Time is about 10 hour and call time is about 7 hour. All battery we have FCC, ROHS, FCC certifications. We supply OEM & ODM service more than 7 years, expecting working with more customer in future.
Iphone 5C Battery ,5C Battery,Apple 5C Battery,Apple Iphone 5C Battery
Shenzhen Hequanqingnuo Electronic Technology Co., Ltd. , https://www.hqqnbattery.com