IR pushes new ultra-high speed insulated gate bipolar transistor

International Rectifier introduced a new rugged and reliable 1200V ultra-high speed Insulated Gate Bipolar Transistor (IGBT) series optimized for industrial motor drive and uninterruptible power supply (UPS) applications.

The new device uses IR's field stop channel ultra-thin wafer technology to reduce conduction and switching losses. The device has a 10μs minimum short-circuit rating and is packaged with a soft recovery diode with low reverse recovery charge (Qrr), which is optimized for rugged industrial applications.

Pan Dawei, vice president of sales for IR Asia Pacific, said: “The new 1200V trench IGBTs have very low Vce(on) and low switching losses, and bring higher system efficiency and robust transient performance, which increase reliability and make it Very suitable for harsh industrial environments."

These packaged devices are suitable for a wide range of currents from 10A to 50A. Other key performance advantages include Tjmax up to 150°C, positive VCE(on) temperature coefficients that facilitate paralleling, and low VCE(on) that can reduce power consumption and increase power density. The new device can also provide die form.