Common power semiconductor device inventory summary
Power Electronic Device, also known as power semiconductor device, is used in high-power (usually refers to currents of tens to thousands of amps, voltages of hundreds of volts or more) electronic devices in power conversion and power control circuits. It can be divided into semi-controlled devices, fully controlled devices and uncontrollable devices. The thyristors are semi-controlled devices, with the highest voltage and current capacity among all devices; power diodes are uncontrollable devices, and the structure and principle are simple and work. Reliable; can also be divided into voltage-driven devices and current-driven devices, of which GTO, GTR is a current-driven device, IGBT, power MOSFET is a voltage-driven device.
1. MCT (MOS Control led Thyristor): MOS control thyristor
Equivalent circuit diagram of MCT
MCT is a new type of MOS and bipolar composite device. As shown in FIG. MCT combines the high-impedance, low-drive graph MCT power and fast switching speed of the MOSFET with the high-voltage, high-current characteristics of the thyristor to form a high-power, high-voltage, fast-controlled device. Essentially MCT is a MOS gate-controlled thyristor. It can be turned on or off by adding a narrow pulse to the gate, which is made up of a myriad of unit cells connected in parallel. Compared with GTR, MOSFET, IGBT, GTO and other devices, it has the following advantages:
(1) The voltage is high, the current capacity is large, the blocking voltage has reached 3 000V, the peak current is up to 1 000 A, and the maximum turn-off current density is 6 000 kA/m 2 ;
(2) The on-state voltage drop is small, the loss is small, and the on-state voltage drop is about 11V;
(3) Extremely high dv/dt and di/dt tolerance, dv/dt has reached 20 kV/s, di/dt is 2 kA/s;
(4) The switching speed is fast, the switching loss is small, the turn-on time is about 200ns, and the 1 000 V device can be turned off within 2 s;
2. IGCT (Intergrated Gate Commutated Thyristors)
IGCT is a new type of device developed on the basis of thyristor technology combined with IGBT and GTO technology. It is suitable for high-voltage and large-capacity inverter systems. It is a new type of power semiconductor device used in giant power electronics complete sets.
The IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects its gate driver with low inductance in the periphery, combining the stable turn-off capability of the transistor and the low on-state loss of the thyristor. The performance of the thyristor is exerted during the turn-on phase, and the turn-off phase exhibits the characteristics of the transistor. If the IGCT chip is not in series, the two-level inverter power is 0.5~3 MW, and the three-level inverter is 1~6 MW. If the reverse diode is separated, it is not integrated with IGCT, two-level. The inverter power can be expanded to 4 /5 MW and the three levels are extended to 9 MW.
At present, IGCT has been commercialized. The highest performance parameter of IGCT products manufactured by ABB is 4[1] 5 kV / 4 kA, and the highest development level is 6 kV / 4 kA. In 1998, Mitsubishi Corporation of Japan also developed a GCT thyristor with a diameter of 88 mm. The IGCT has low loss and fast switching, which ensures its reliable and efficient use in 300 kW~ 10 MW converters without the need for series and in parallel.
3. IEGT (InjecTIon Enhanced Gate Transistor) electron injection enhancement gate transistor
The IEGT is an IGBT series power electronic device with a withstand voltage of 4 kV or more. By adopting a structure with enhanced injection, a low on-state voltage is realized, and a large-capacity power electronic device has been rapidly developed. IEGT has potential development prospects as MOS series power electronic devices, featuring low loss, high speed operation, high withstand voltage, active gate drive intelligence, and the characteristics of self-current sharing using a trench structure and multi-chip parallel connection. It has great potential for further expansion of current capacity. In addition, a number of derivative products are available through module packaging, which is expected to be used in large and medium capacity Converter applications. The IECT developed by Toshiba of Japan utilizes the electron injection enhancement effect, which combines the advantages of both IGBT and GTO: low saturation voltage drop, safe working area (absorption loop capacity is only about one-tenth of GTO), low gate Drive power (two orders of magnitude lower than GT O) and higher operating frequency. The device uses a flat-plate crimp motor extraction structure with high reliability and performance up to 4.5 kV / 1 500A.
4. IPEM (Intergrated Power Elactronics Mod ules): Integrated Power Electronics Module
IPEM is a module that integrates many of the devices of a power electronics. Firstly, a semiconductor device MOSFET, IGBT or MCT and a diode chip are packaged together to form a building block unit, and then these building blocks are stacked on the open high-conductivity insulating ceramic substrate, which is followed by Copper substrate, oxidized enamel sheet and heat sink. On the upper part of the building block, the control circuit, the gate drive, the current and temperature sensor and the protection circuit are integrated on a thin insulating layer by surface mounting. IPEM realizes the intelligent and modular power electronics technology, which greatly reduces circuit wiring inductance, system noise and parasitic oscillation, and improves system efficiency and reliability.
5. PEBB (Power Electric Building Block):
Typical PEBB
The Power Electronic Building Block (PEBB) is a device or module that can be integrated with IPEM to process power. PEBB is not a specific semiconductor device, it is the integration of different devices and technologies designed according to the optimal circuit structure and system structure. The typical PEBB is shown above. Although it looks a lot like a power semiconductor module, PEBB includes, in addition to power semiconductor devices, gate drive circuits, level shifting, sensors, protection circuits, power supplies, and passive components. PEBB has an energy interface and a communication interface. Through these two interfaces, several PEBBs can form a power electronic system. These systems can be as simple as a small DC-DC converter or as complex as a large distributed power system. In a system, the number of PEBBs can range from one to any number. Multiple PEBB modules work together to perform system level functions such as voltage conversion, energy storage and conversion, and yin resistance matching. The most important feature of PEBB is its versatility.
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