Small devices, the future of new energy vehicles

Introduction: As a key component of electric energy conversion, IGBT is the core component of new energy vehicle electronic control system and DC charging pile. In the next few years, China's new energy vehicle and charging pile market will enter an outbreak period, and IGBT as its core device will also usher in Gold development period.

New energy drive, IGBT has a broad space for growth

IGBT (Insulated Gate Bipolar Transistor) is a composite full-control voltage-driven power semiconductor device. It is a world-recognized representative product of the third technological revolution of power electronics. It has high frequency, high voltage, high current and is easy to switch. Such as excellent performance, the industry is known as the "CPU" of the power converter.

Small devices, the future of new energy vehicles

IGBT can achieve energy saving and emission reduction, and has good environmental protection benefits, which is an inevitable direction for future application development. IGBT can be widely used in traditional and emerging fields such as automotive electronics, power, consumer electronics, and new energy, with broad market prospects.

The characteristics of IGBT make it ideal for applications in strategic emerging industries such as new energy vehicles. The IGBT module is the core component of the new energy vehicle electronic control system and DC charging pile; the cost accounts for 10% of the new energy vehicle cost, accounting for 20% of the charging pile cost. Driven by the policy, China's new energy vehicle and charging pile market will enter an outbreak period. IGBT as its core device will also usher in the golden development period. It is expected that the domestic new energy vehicle and charging pile market will drive the demand of 20 billion IGBT modules in the next five years. .

Small devices, the future of new energy vehicles

Lack of core pain, subject to people

China is the world's largest power semiconductor market, accounting for more than 50% of the world market, but IGBT is the mainstream device of power semiconductors. In the past, it was basically monopolized by foreign manufacturers. European and American companies have a dominant position in the IGBT market due to their good product quality and leading technology, and are also the main suppliers of China's IGBT market.

In 2008, China's first high-speed rail-Beijing-Tianjin inter-city railway was opened, and then more high-speed rail lines such as Wuhan-Guangzhou high-speed rail were opened, and the demand for IGBTs has doubled. An 8-column standard EMU requires 152 IGBT modules. The cost of this module is nearly two million yuan. Every year, China's high-speed rail manufacturing needs to purchase more than 100,000 IGBT modules from abroad, with a purchase capital of more than 1.2 billion yuan.

The price of an IGBT module is equivalent to RMB 15,000 and only sells finished products. Even as the leading company in China's traction electric drive technology, CRRC Zhuzhou still spends hundreds of millions of dollars each year to purchase IGBT products from abroad.

Technology and market are monopolized, and the procurement of foreign devices faces “long-term, high-price”. An IGBT device component, the procurement cycle lasts for several months or even more than half a year. If this situation is not changed, it will not only affect the sustained, healthy and rapid development of China's power electronics industry, but also seriously hinder the long-term development of China's strategic emerging industries, especially in Rail transit traction equipment, new energy, flexible DC transmission and other industrial fields, this is a very embarrassing reality.

Independent design and manufacture of Chinese own IGBT chips, to create a complete IGBT industry chain from IGBT chip development - module packaging - system application testing, has become a common demand of the state and industry.

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